Electromigration in Al interconnects and the challenges in ultra-deep submicron technology

	Electromigration in Al interconnects and the challenges in ultra-deep submicron technology
	Zhang, WJ(张文杰） ; Yi, WB（易万兵） ; Wu, J（吴瑾）
刊名	ACTA PHYSICA SINICA
	2006
卷号	55 期号:10 页码:5424-5434
关键词	THIN-FILMS TRANSPORT MECHANISMS DUAL-DAMASCENE ALUMINUM FILMS TEXTURE GROWTH GRAIN TI RELIABILITY UNDERLAYER
ISSN号	1000-3290
通讯作者	Zhang, WJ, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China
学科主题	Physics, Multidisciplinary
收录类别	SCI
原文出处	http://www.cnki.net/kcms/detail/detail.aspx?Quer20120228ID=1&CurRec=1&DbCode=CJFQ&dbname=CJFD0608&filename=WLXB200610073&uid=WEEvREcwSlJHSldRa1FiOS9VZHNRK0lqdEJl201202283k4R1ZacDBLa3VWRXR6bVNIc2ZLMmF1VUZraHU3WS9iT0s4PQ==
语种	中文
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95242]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Zhang, WJ,Yi, WB,Wu, J. Electromigration in Al interconnects and the challenges in ultra-deep submicron technology[J]. ACTA PHYSICA SINICA,2006,55(10):5424-5434.
APA	Zhang, WJ,Yi, WB,&Wu, J.(2006).Electromigration in Al interconnects and the challenges in ultra-deep submicron technology.ACTA PHYSICA SINICA,55(10),5424-5434.
MLA	Zhang, WJ,et al."Electromigration in Al interconnects and the challenges in ultra-deep submicron technology".ACTA PHYSICA SINICA 55.10(2006):5424-5434.