Investigation on the stabilization of the median resistance state for phase change memory cell with doublelayer chalcogenide films

	Investigation on the stabilization of the median resistance state for phase change memory cell with doublelayer chalcogenide films
	Rao, F ; Song, ZT ; Wu, LC ; Liu, B ; Feng, SL ; Chen, B
刊名	APPLIED PHYSICS LETTERS
	2007
卷号	91 期号:12 页码:123511-123511
关键词	THIN-FILMS
ISSN号	0003-6951
通讯作者	Rao, F, Chinese Acad Sci, Shanghai Inst Micro Syst & Informat Technol, Nanotechnol Lab, Shanghai 200050, Peoples R China
学科主题	Physics, Applied
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95131]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Rao, F,Song, ZT,Wu, LC,et al. Investigation on the stabilization of the median resistance state for phase change memory cell with doublelayer chalcogenide films[J]. APPLIED PHYSICS LETTERS,2007,91(12):123511-123511.
APA	Rao, F,Song, ZT,Wu, LC,Liu, B,Feng, SL,&Chen, B.(2007).Investigation on the stabilization of the median resistance state for phase change memory cell with doublelayer chalcogenide films.APPLIED PHYSICS LETTERS,91(12),123511-123511.
MLA	Rao, F,et al."Investigation on the stabilization of the median resistance state for phase change memory cell with doublelayer chalcogenide films".APPLIED PHYSICS LETTERS 91.12(2007):123511-123511.