The simulation of the thermal stress in GaN epilayer on silicon-based substrates

	The simulation of the thermal stress in GaN epilayer on silicon-based substrates
	Sun, JY ; Chen, J ; Yang, ZF ; Ou, X ; Wang, X
刊名	AD'07: Proceedings of Asia Display 2007, Vols 1 and 2
	2007
页码	1892-1894
关键词	GROWTH MOCVD
通讯作者	Sun, JY, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
学科主题	Optics; Physics, Multidisciplinary; Physics, Condensed Matter
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95111]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Sun, JY,Chen, J,Yang, ZF,et al. The simulation of the thermal stress in GaN epilayer on silicon-based substrates[J]. AD'07: Proceedings of Asia Display 2007, Vols 1 and 2,2007:1892-1894.
APA	Sun, JY,Chen, J,Yang, ZF,Ou, X,&Wang, X.(2007).The simulation of the thermal stress in GaN epilayer on silicon-based substrates.AD'07: Proceedings of Asia Display 2007, Vols 1 and 2,1892-1894.
MLA	Sun, JY,et al."The simulation of the thermal stress in GaN epilayer on silicon-based substrates".AD'07: Proceedings of Asia Display 2007, Vols 1 and 2 (2007):1892-1894.