Relaxed SiGe-on-insulator with high Ge fraction obtained by oxidation of SiGe/Si-on-insulator with hydrogen ions implantation

	Relaxed SiGe-on-insulator with high Ge fraction obtained by oxidation of SiGe/Si-on-insulator with hydrogen ions implantation
	Cheng, XL ; Liu, H ; Zhang, F
刊名	APPLIED SURFACE SCIENCE
	2007
卷号	253 期号:10 页码:4472-4476
关键词	HETEROJUNCTION BIPOLAR-TRANSISTORS SIMOX TECHNOLOGY SUBSTRATE ULTRATHIN MOSFETS GROWTH LAYER
ISSN号	0169-4332
通讯作者	Cheng, XL, Univ Sci & Technol, Dept Appl Phys, Suzhou 215009, Peoples R China
学科主题	Chemistry, Physical; Materials Science, Coatings & Films; Physics, Applied; Physics, Condensed Matter
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95103]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Cheng, XL,Liu, H,Zhang, F. Relaxed SiGe-on-insulator with high Ge fraction obtained by oxidation of SiGe/Si-on-insulator with hydrogen ions implantation[J]. APPLIED SURFACE SCIENCE,2007,253(10):4472-4476.
APA	Cheng, XL,Liu, H,&Zhang, F.(2007).Relaxed SiGe-on-insulator with high Ge fraction obtained by oxidation of SiGe/Si-on-insulator with hydrogen ions implantation.APPLIED SURFACE SCIENCE,253(10),4472-4476.
MLA	Cheng, XL,et al."Relaxed SiGe-on-insulator with high Ge fraction obtained by oxidation of SiGe/Si-on-insulator with hydrogen ions implantation".APPLIED SURFACE SCIENCE 253.10(2007):4472-4476.