Investigation of compositional gradient phase change SixSb2Te3 thin films

	Investigation of compositional gradient phase change SixSb2Te3 thin films
	Zhang, T ; Song, ZT ; Liu, B ; Feng, SL ; Chen, B
刊名	JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
	2007
卷号	46 期号:1-3 页码:L70-L73
关键词	GE2SB2TE5 FILM CRYSTALLIZATION IMPLANTATION RESISTANCE STORAGE MEMORY
ISSN号	0021-4922
通讯作者	Zhang, T, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Lab Nanotechnol, Shanghai 200050, Peoples R China
学科主题	Physics, Applied
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95077]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Zhang, T,Song, ZT,Liu, B,et al. Investigation of compositional gradient phase change SixSb2Te3 thin films[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS,2007,46(1-3):L70-L73.
APA	Zhang, T,Song, ZT,Liu, B,Feng, SL,&Chen, B.(2007).Investigation of compositional gradient phase change SixSb2Te3 thin films.JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS,46(1-3),L70-L73.
MLA	Zhang, T,et al."Investigation of compositional gradient phase change SixSb2Te3 thin films".JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 46.1-3(2007):L70-L73.