Phase change memory cell with an upper amorphous nitride silicon germanium heating layer

	Phase change memory cell with an upper amorphous nitride silicon germanium heating layer
	Rao, F ; Song, ZT ; Wu, LC ; Zhong, M ; Feng, SL
刊名	APPLIED PHYSICS LETTERS
	2007
卷号	91 期号:7 页码:73505-73505
关键词	RANDOM-ACCESS MEMORY THIN-FILMS CRYSTALLIZATION CONDUCTION SEPARATION
ISSN号	0003-6951
通讯作者	Rao, F, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Nanotechnol Lab, Shanghai 200050, Peoples R China
学科主题	Physics, Applied
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95033]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Rao, F,Song, ZT,Wu, LC,et al. Phase change memory cell with an upper amorphous nitride silicon germanium heating layer[J]. APPLIED PHYSICS LETTERS,2007,91(7):73505-73505.
APA	Rao, F,Song, ZT,Wu, LC,Zhong, M,&Feng, SL.(2007).Phase change memory cell with an upper amorphous nitride silicon germanium heating layer.APPLIED PHYSICS LETTERS,91(7),73505-73505.
MLA	Rao, F,et al."Phase change memory cell with an upper amorphous nitride silicon germanium heating layer".APPLIED PHYSICS LETTERS 91.7(2007):73505-73505.