Behavior of substrate enhanced electron injection in advanced deep sub-micron NMOSFETs

	Behavior of substrate enhanced electron injection in advanced deep sub-micron NMOSFETs
	Wang,QX ; Sun,LX ; Yap,A ; Zhang,YJ ; Li,H ; Liu,SH ; Zou,SC
刊名	MICROELECTRONIC ENGINEERING
	2008
卷号	85 期号:3 页码:493-499
关键词	HOT-CARRIER DEGRADATION THICK SIO2 OXIDES IMPACT IONIZATION MOSFETS CHANNEL MEMORY CELLS MODEL NBTI 1ST
ISSN号	0167-9317
通讯作者	Wang, QX, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, 865 Changning Rd, Shanghai 200050, Peoples R China
学科主题	Engineering ; Electrical & Electronic; Nanoscience & Nanotechnology; Optics; Physics ; Applied
收录类别	SCI
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/94970]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Wang,QX,Sun,LX,Yap,A,et al. Behavior of substrate enhanced electron injection in advanced deep sub-micron NMOSFETs[J]. MICROELECTRONIC ENGINEERING,2008,85(3):493-499.
APA	Wang,QX.,Sun,LX.,Yap,A.,Zhang,YJ.,Li,H.,...&Zou,SC.(2008).Behavior of substrate enhanced electron injection in advanced deep sub-micron NMOSFETs.MICROELECTRONIC ENGINEERING,85(3),493-499.
MLA	Wang,QX,et al."Behavior of substrate enhanced electron injection in advanced deep sub-micron NMOSFETs".MICROELECTRONIC ENGINEERING 85.3(2008):493-499.