Analysis of the scattering of electrons by special vibrational modes in a GaAs quantum well with a thin AlAs middle barrier: Mobility modulated by a transversal electric field

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	Analysis of the scattering of electrons by special vibrational modes in a GaAs quantum well with a thin AlAs middle barrier: Mobility modulated by a transversal electric field
	Wang, XF ; Lima, ICD ; Troper, A ; LEI, XL（雷啸霖）（雷啸霖）
刊名	JOURNAL OF APPLIED PHYSICS
	1999
卷号	85 期号:9 页码:6598-6605
关键词	OPTICAL-PHONON INTERACTION DIELECTRIC CONTINUUM RATES HETEROSTRUCTURES SUPERLATTICES ENHANCEMENT TRANSITION TRANSPORT SYSTEMS WIRE
ISSN号	0021-8979
通讯作者	Wang, XF, Ctr Brasileiro Pesquisas Fis, Rua Xavier Sigaud 150, BR-22290180 Rio De Janeiro, Brazil
学科主题	Physics, Applied
收录类别	SCI
语种	英语
公开日期	2012-03-25
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/99149]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文（1999年以前)
推荐引用方式 GB/T 7714	Wang, XF,Lima, ICD,Troper, A,et al. Analysis of the scattering of electrons by special vibrational modes in a GaAs quantum well with a thin AlAs middle barrier: Mobility modulated by a transversal electric field[J]. JOURNAL OF APPLIED PHYSICS,1999,85(9):6598-6605.
APA	Wang, XF,Lima, ICD,Troper, A,&LEI, XL.(1999).Analysis of the scattering of electrons by special vibrational modes in a GaAs quantum well with a thin AlAs middle barrier: Mobility modulated by a transversal electric field.JOURNAL OF APPLIED PHYSICS,85(9),6598-6605.
MLA	Wang, XF,et al."Analysis of the scattering of electrons by special vibrational modes in a GaAs quantum well with a thin AlAs middle barrier: Mobility modulated by a transversal electric field".JOURNAL OF APPLIED PHYSICS 85.9(1999):6598-6605.