Double-resonant structure in the high-frequency transresistance of coupled electron-hole systems

	Double-resonant structure in the high-frequency transresistance of coupled electron-hole systems
	Dong, B ; LEI, XL（雷啸霖）（雷啸霖）
刊名	EUROPEAN PHYSICAL JOURNAL B
	1999
卷号	7 期号:1 页码:147-153
关键词	PLASMON MODES TRANSPORT CONDUCTIVITY GAAS
ISSN号	1434-6028
通讯作者	Dong, B, Chinese Acad Sci, Shanghai Inst Met, State Key Lab Funct Mat Informat, 865 Changning Rd, Shanghai 200050, Peoples R China
学科主题	Physics, Condensed Matter
收录类别	SCI
语种	英语
公开日期	2012-03-25
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/99129]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文（1999年以前)
推荐引用方式 GB/T 7714	Dong, B,LEI, XL. Double-resonant structure in the high-frequency transresistance of coupled electron-hole systems[J]. EUROPEAN PHYSICAL JOURNAL B,1999,7(1):147-153.
APA	Dong, B,&LEI, XL.(1999).Double-resonant structure in the high-frequency transresistance of coupled electron-hole systems.EUROPEAN PHYSICAL JOURNAL B,7(1),147-153.
MLA	Dong, B,et al."Double-resonant structure in the high-frequency transresistance of coupled electron-hole systems".EUROPEAN PHYSICAL JOURNAL B 7.1(1999):147-153.