Growth of SiC thin films on (100) and (111) silicon by pulsed laser deposition combined with a vacuum annealing process

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	Growth of SiC thin films on (100) and (111) silicon by pulsed laser deposition combined with a vacuum annealing process
	Huang, JP ; Wang, LW ; Wen, U ; Wang, YX ; Lin, CL ; Zetterling, CM ; Ostling, M
刊名	WIDE-BANDGAP SEMICONDUCTORS FOR HIGH-POWER, HIGH-FREQUENCY AND HIGH-TEMPERATURE APPLICATIONS-1999
	1999
卷号	572 页码:207-212
关键词	CHEMICAL-VAPOR-DEPOSITION CARBIDE TEMPERATURE DEVICES
ISSN号	0272-9172
通讯作者	Huang, JP, Chinese Acad Sci, Shanghai Inst Met, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
学科主题	Materials Science, Multidisciplinary
收录类别	SCI
语种	英语
公开日期	2012-03-25
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/99115]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文（1999年以前)
推荐引用方式 GB/T 7714	Huang, JP,Wang, LW,Wen, U,et al. Growth of SiC thin films on (100) and (111) silicon by pulsed laser deposition combined with a vacuum annealing process[J]. WIDE-BANDGAP SEMICONDUCTORS FOR HIGH-POWER, HIGH-FREQUENCY AND HIGH-TEMPERATURE APPLICATIONS-1999,1999,572:207-212.
APA	Huang, JP.,Wang, LW.,Wen, U.,Wang, YX.,Lin, CL.,...&Ostling, M.(1999).Growth of SiC thin films on (100) and (111) silicon by pulsed laser deposition combined with a vacuum annealing process.WIDE-BANDGAP SEMICONDUCTORS FOR HIGH-POWER, HIGH-FREQUENCY AND HIGH-TEMPERATURE APPLICATIONS-1999,572,207-212.
MLA	Huang, JP,et al."Growth of SiC thin films on (100) and (111) silicon by pulsed laser deposition combined with a vacuum annealing process".WIDE-BANDGAP SEMICONDUCTORS FOR HIGH-POWER, HIGH-FREQUENCY AND HIGH-TEMPERATURE APPLICATIONS-1999 572(1999):207-212.