Gettering of Cu by microcavities in bonded/ion-cut silicon-on-insulator and separation by implantation of oxygen

	Gettering of Cu by microcavities in bonded/ion-cut silicon-on-insulator and separation by implantation of oxygen
	Zhang, MO ; Zeng, XC ; Chu, PK ; Scholz, R ; Lin, CL
刊名	JOURNAL OF APPLIED PHYSICS
	1999
卷号	86 期号:8 页码:4214-4219
关键词	ION-IMPLANTATION HYDROGEN CAVITIES COPPER NICKEL
ISSN号	0021-8979
通讯作者	Chu, PK, City Univ Hong Kong, Dept Phys & Mat Sci, 83 Tat Chee Ave, Kowloon, Hong Kong
学科主题	Physics, Applied
收录类别	SCI
语种	英语
公开日期	2012-03-25
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/99095]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文（1999年以前)
推荐引用方式 GB/T 7714	Zhang, MO,Zeng, XC,Chu, PK,et al. Gettering of Cu by microcavities in bonded/ion-cut silicon-on-insulator and separation by implantation of oxygen[J]. JOURNAL OF APPLIED PHYSICS,1999,86(8):4214-4219.
APA	Zhang, MO,Zeng, XC,Chu, PK,Scholz, R,&Lin, CL.(1999).Gettering of Cu by microcavities in bonded/ion-cut silicon-on-insulator and separation by implantation of oxygen.JOURNAL OF APPLIED PHYSICS,86(8),4214-4219.
MLA	Zhang, MO,et al."Gettering of Cu by microcavities in bonded/ion-cut silicon-on-insulator and separation by implantation of oxygen".JOURNAL OF APPLIED PHYSICS 86.8(1999):4214-4219.