Structural and optical properties of GaN layers directly grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy

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	Structural and optical properties of GaN layers directly grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy
	Yang, B ; Brandt, O ; Zhang, YG(张永刚） ; Li, AZ ; Jenichen, B ; Paris, G ; Ploog, KH
刊名	SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2
	1998
卷号	264-2 页码:1235-1238
ISSN号	0255-5476
通讯作者	Yang, B, Paul Drude Inst Festkorperelekt, Hausvogteipl 5-7, D-10117 Berlin, Germany
学科主题	Materials Science, Multidisciplinary
收录类别	SCI
原文出处	http://apps.webofknowledge.com/full_record.do?product=UA&search_mode=GeneralSearch&qid=16&SID=T1bBjPaMHA4PI3h27lN&page=1&doc=1
语种	英语
公开日期	2012-03-25
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/98998]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文（1999年以前)
推荐引用方式 GB/T 7714	Yang, B,Brandt, O,Zhang, YG,et al. Structural and optical properties of GaN layers directly grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy[J]. SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2,1998,264-2:1235-1238.
APA	Yang, B.,Brandt, O.,Zhang, YG.,Li, AZ.,Jenichen, B.,...&Ploog, KH.(1998).Structural and optical properties of GaN layers directly grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy.SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2,264-2,1235-1238.
MLA	Yang, B,et al."Structural and optical properties of GaN layers directly grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy".SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 264-2(1998):1235-1238.