C-axis oriented AlN thin films on silicon prepared by ultrahigh vacuum evaporation of Al combined with post-nitridation

	C-axis oriented AlN thin films on silicon prepared by ultrahigh vacuum evaporation of Al combined with post-nitridation
	Huang, JP ; Wang, LW ; Shen, QW ; Gao, JX ; Ni, RS ; Lin, CL
刊名	CHINESE PHYSICS LETTERS
	1998
卷号	15 期号:10 页码:732-733
关键词	CHEMICAL-VAPOR-DEPOSITION ALUMINUM
ISSN号	0256-307X
通讯作者	Huang, JP, Chinese Acad Sci, Shanghai Inst Met, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
学科主题	Physics, Multidisciplinary
收录类别	SCI
语种	英语
公开日期	2012-03-25
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/98952]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文（1999年以前)
推荐引用方式 GB/T 7714	Huang, JP,Wang, LW,Shen, QW,et al. C-axis oriented AlN thin films on silicon prepared by ultrahigh vacuum evaporation of Al combined with post-nitridation[J]. CHINESE PHYSICS LETTERS,1998,15(10):732-733.
APA	Huang, JP,Wang, LW,Shen, QW,Gao, JX,Ni, RS,&Lin, CL.(1998).C-axis oriented AlN thin films on silicon prepared by ultrahigh vacuum evaporation of Al combined with post-nitridation.CHINESE PHYSICS LETTERS,15(10),732-733.
MLA	Huang, JP,et al."C-axis oriented AlN thin films on silicon prepared by ultrahigh vacuum evaporation of Al combined with post-nitridation".CHINESE PHYSICS LETTERS 15.10(1998):732-733.