Characterization of Schottky contacts on n type 6H-SiC

	Characterization of Schottky contacts on n type 6H-SiC
	Zhang,YG ; Li,XL ; Milnes,AG
刊名	SILICON CARBIDE AND RELATED MATERIALS 1995
	1996
卷号	142 期号:0 页码:665-668
ISSN号	0951-3248
通讯作者	Zhang, YG, CHINESE ACAD SCI,SHANGHAI INST MET,STATE KEY LAB FUNCT MAT INFORMAT,865 CHANG NING RD,SHANGHAI 200050,PEOPLES R CHINA
学科主题	Physics ; Multidisciplinary
收录类别	SCI
原文出处	http://apps.webofknowledge.com/full_record.do?product=UA&search_mode=GeneralSearch&qid=39&SID=Q17j6Ejh3Mi@ML3HG1p&page=1&doc=1
公开日期	2012-03-25
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/98699]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文（1999年以前)
推荐引用方式 GB/T 7714	Zhang,YG,Li,XL,Milnes,AG. Characterization of Schottky contacts on n type 6H-SiC[J]. SILICON CARBIDE AND RELATED MATERIALS 1995,1996,142(0):665-668.
APA	Zhang,YG,Li,XL,&Milnes,AG.(1996).Characterization of Schottky contacts on n type 6H-SiC.SILICON CARBIDE AND RELATED MATERIALS 1995,142(0),665-668.
MLA	Zhang,YG,et al."Characterization of Schottky contacts on n type 6H-SiC".SILICON CARBIDE AND RELATED MATERIALS 1995 142.0(1996):665-668.