SI INCORPORATION WITH ISOELECTRONIC AS CO-DOPING IN MBE GROWN GASB, ALSB ON GAAS SUBSTRATES

	SI INCORPORATION WITH ISOELECTRONIC AS CO-DOPING IN MBE GROWN GASB, ALSB ON GAAS SUBSTRATES
	LI,AZ ; ZHENG,YL ; QIU,JH ; WANG,JX ; HU,FY
刊名	INSTITUTE OF PHYSICS CONFERENCE SERIES
	1989
期号	106 页码:159-163
ISSN号	0951-3248
通讯作者	LI, AZ, ACAD SINICA,SHANGHAI INST MET,DEPT SEMICOND MAT,SHANGHAI 200050,PEOPLES R CHINA
学科主题	Physics ; Multidisciplinary
收录类别	SCI
原文出处	http://apps.webofknowledge.com/full_record.do?product=UA&search_mode=GeneralSearch&qid=164&SID=Q2KJI8fO7EELblcPNIl&page=1&doc=1
公开日期	2012-03-25
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/98275]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文（1999年以前)
推荐引用方式 GB/T 7714	LI,AZ,ZHENG,YL,QIU,JH,et al. SI INCORPORATION WITH ISOELECTRONIC AS CO-DOPING IN MBE GROWN GASB, ALSB ON GAAS SUBSTRATES[J]. INSTITUTE OF PHYSICS CONFERENCE SERIES,1989(106):159-163.
APA	LI,AZ,ZHENG,YL,QIU,JH,WANG,JX,&HU,FY.(1989).SI INCORPORATION WITH ISOELECTRONIC AS CO-DOPING IN MBE GROWN GASB, ALSB ON GAAS SUBSTRATES.INSTITUTE OF PHYSICS CONFERENCE SERIES(106),159-163.
MLA	LI,AZ,et al."SI INCORPORATION WITH ISOELECTRONIC AS CO-DOPING IN MBE GROWN GASB, ALSB ON GAAS SUBSTRATES".INSTITUTE OF PHYSICS CONFERENCE SERIES .106(1989):159-163.