GAAS METAL-THIN-INSULATOR-SEMICONDUCTOR SCHOTTKY-BARRIER FET WITH HIGHLY-DOPED CHANNEL

	GAAS METAL-THIN-INSULATOR-SEMICONDUCTOR SCHOTTKY-BARRIER FET WITH HIGHLY-DOPED CHANNEL
	ZHOU,M ; WANG,WY
刊名	CHINESE PHYSICS
	1985
卷号	5 期号:3 页码:792-799
ISSN号	0273-429X
学科主题	Physics, Multidisciplinary
收录类别	SCI
原文出处	http://apps.webofknowledge.com/full_record.do?product=UA&search_mode=GeneralSearch&qid=190&SID=Y1p6iIKgd@dencla9el&page=1&doc=1
语种	英语
公开日期	2012-03-25
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/98047]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文（1999年以前)
推荐引用方式 GB/T 7714	ZHOU,M,WANG,WY. GAAS METAL-THIN-INSULATOR-SEMICONDUCTOR SCHOTTKY-BARRIER FET WITH HIGHLY-DOPED CHANNEL[J]. CHINESE PHYSICS,1985,5(3):792-799.
APA	ZHOU,M,&WANG,WY.(1985).GAAS METAL-THIN-INSULATOR-SEMICONDUCTOR SCHOTTKY-BARRIER FET WITH HIGHLY-DOPED CHANNEL.CHINESE PHYSICS,5(3),792-799.
MLA	ZHOU,M,et al."GAAS METAL-THIN-INSULATOR-SEMICONDUCTOR SCHOTTKY-BARRIER FET WITH HIGHLY-DOPED CHANNEL".CHINESE PHYSICS 5.3(1985):792-799.