Growth of High Quality Strained-Si on Ultra-Thin SiGe-on-Insulator Substrate

	Growth of High Quality Strained-Si on Ultra-Thin SiGe-on-Insulator Substrate
	Liu, XY ; Liu, WL ; Ma, XB ; Chen, C ; Song, ZT ; Lin, CL
刊名	CHINESE PHYSICS LETTERS
	2009
卷号	26 期号:11 页码:116802-116802
关键词	OXIDATION RELAXATION SILICON LAYERS
ISSN号	0256-307X
通讯作者	Liu, XY, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Lab Nanotechnol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
学科主题	Physics, Multidisciplinary
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/94889]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Liu, XY,Liu, WL,Ma, XB,et al. Growth of High Quality Strained-Si on Ultra-Thin SiGe-on-Insulator Substrate[J]. CHINESE PHYSICS LETTERS,2009,26(11):116802-116802.
APA	Liu, XY,Liu, WL,Ma, XB,Chen, C,Song, ZT,&Lin, CL.(2009).Growth of High Quality Strained-Si on Ultra-Thin SiGe-on-Insulator Substrate.CHINESE PHYSICS LETTERS,26(11),116802-116802.
MLA	Liu, XY,et al."Growth of High Quality Strained-Si on Ultra-Thin SiGe-on-Insulator Substrate".CHINESE PHYSICS LETTERS 26.11(2009):116802-116802.