Study on Adhesive Strength between Ge2Sb2Te5 Film and Electrodes for Phase Change Memory Application

	Study on Adhesive Strength between Ge2Sb2Te5 Film and Electrodes for Phase Change Memory Application
	Liu, YB ; Zhang, T ; Zhang, GX ; Niu, XM ; Song, ZT ; Min, GQ ; Lin, Y ; Zhang, J ; Zhou, WM ; Zhang, JP ; Chu, JT ; Wan, YZ ; Feng, SL
刊名	JAPANESE JOURNAL OF APPLIED PHYSICS
	2009
卷号	48 期号:10 页码:101601-101601
关键词	THIN-FILMS CRYSTALLIZATION RESISTANCE
ISSN号	0021-4922
通讯作者	Liu, YB, Shanghai Nanotechnol Promot Ctr, Lab Nanotechnol, Shanghai 200237, Peoples R China
学科主题	Physics, Applied
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/94886]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Liu, YB,Zhang, T,Zhang, GX,et al. Study on Adhesive Strength between Ge2Sb2Te5 Film and Electrodes for Phase Change Memory Application[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2009,48(10):101601-101601.
APA	Liu, YB.,Zhang, T.,Zhang, GX.,Niu, XM.,Song, ZT.,...&Feng, SL.(2009).Study on Adhesive Strength between Ge2Sb2Te5 Film and Electrodes for Phase Change Memory Application.JAPANESE JOURNAL OF APPLIED PHYSICS,48(10),101601-101601.
MLA	Liu, YB,et al."Study on Adhesive Strength between Ge2Sb2Te5 Film and Electrodes for Phase Change Memory Application".JAPANESE JOURNAL OF APPLIED PHYSICS 48.10(2009):101601-101601.