Control of the epitaxial orientation and reduction of the interface leakage current in YMnO3/GaN heterostructures

	Control of the epitaxial orientation and reduction of the interface leakage current in YMnO3/GaN heterostructures
	Wu, H ; Yuan, J ; Peng, T ; Pan, Y ; Han, T ; Shen, K ; Zhao, BR ; Liu, C
刊名	JOURNAL OF PHYSICS D-APPLIED PHYSICS
	2009
卷号	42 期号:18 页码:185302-185302
关键词	NONVOLATILE MEMORY DEVICES THIN-FILMS PLATINUM-ELECTRODES GROWTH DEPOSITION SI CANDIDATE OXIDES FIELD
ISSN号	0022-3727
通讯作者	Liu, C, Wuhan Univ, Key Lab Acoust & Photon Mat & Devices, Minist Educ, Wuhan 430072, Peoples R China
学科主题	Physics, Applied
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/94831]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Wu, H,Yuan, J,Peng, T,et al. Control of the epitaxial orientation and reduction of the interface leakage current in YMnO3/GaN heterostructures[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2009,42(18):185302-185302.
APA	Wu, H.,Yuan, J.,Peng, T.,Pan, Y.,Han, T.,...&Liu, C.(2009).Control of the epitaxial orientation and reduction of the interface leakage current in YMnO3/GaN heterostructures.JOURNAL OF PHYSICS D-APPLIED PHYSICS,42(18),185302-185302.
MLA	Wu, H,et al."Control of the epitaxial orientation and reduction of the interface leakage current in YMnO3/GaN heterostructures".JOURNAL OF PHYSICS D-APPLIED PHYSICS 42.18(2009):185302-185302.