Interfacial and electrical characterization of HfO2 gate dielectric film with a blocking layer of Al2O3

	Interfacial and electrical characterization of HfO2 gate dielectric film with a blocking layer of Al2O3
	Cheng, XH ; He, DW ; Song, ZR ; Yu, YH ; Zhao, QT ; Shen, DS
刊名	ULIS 2009: 10TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION OF SILICON
	2009
页码	205-208
关键词	DEPOSITION HAFNIUM
通讯作者	Cheng, XH, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Changning Rd 865, Shanghai 200050, Peoples R China
学科主题	Engineering, Electrical & Electronic; Materials Science, Multidisciplinary
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/94811]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Cheng, XH,He, DW,Song, ZR,et al. Interfacial and electrical characterization of HfO2 gate dielectric film with a blocking layer of Al2O3[J]. ULIS 2009: 10TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION OF SILICON,2009:205-208.
APA	Cheng, XH,He, DW,Song, ZR,Yu, YH,Zhao, QT,&Shen, DS.(2009).Interfacial and electrical characterization of HfO2 gate dielectric film with a blocking layer of Al2O3.ULIS 2009: 10TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION OF SILICON,205-208.
MLA	Cheng, XH,et al."Interfacial and electrical characterization of HfO2 gate dielectric film with a blocking layer of Al2O3".ULIS 2009: 10TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION OF SILICON (2009):205-208.