Interfacial and Electrical Characterization of HfO2 Gate Dielectric Film with a Blocking Layer of Al2O3

	Interfacial and Electrical Characterization of HfO2 Gate Dielectric Film with a Blocking Layer of Al2O3
	Cheng, XH ; He, DW ; Song, ZR ; Yu, YH ; Shen, DS
刊名	RARE METAL MATERIALS AND ENGINEERING
	2009
卷号	38 期号:2 页码:189-192
关键词	DEPOSITION
ISSN号	1002-185X
通讯作者	Cheng, XH, Wenzhou Univ, Coll Phys & Elect Informat, Wenzhou 325027, Peoples R China
学科主题	Materials Science, Multidisciplinary; Metallurgy & Metallurgical Engineering
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/94791]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Cheng, XH,He, DW,Song, ZR,et al. Interfacial and Electrical Characterization of HfO2 Gate Dielectric Film with a Blocking Layer of Al2O3[J]. RARE METAL MATERIALS AND ENGINEERING,2009,38(2):189-192.
APA	Cheng, XH,He, DW,Song, ZR,Yu, YH,&Shen, DS.(2009).Interfacial and Electrical Characterization of HfO2 Gate Dielectric Film with a Blocking Layer of Al2O3.RARE METAL MATERIALS AND ENGINEERING,38(2),189-192.
MLA	Cheng, XH,et al."Interfacial and Electrical Characterization of HfO2 Gate Dielectric Film with a Blocking Layer of Al2O3".RARE METAL MATERIALS AND ENGINEERING 38.2(2009):189-192.