Simulation of Phase Change Random Access Memory for Low Reset Current and High Thermal Efficiency by Finite Element Modeling

	Simulation of Phase Change Random Access Memory for Low Reset Current and High Thermal Efficiency by Finite Element Modeling
	Gong, YF ; Ling, Y ; Song, ZT ; Feng, SL
刊名	JAPANESE JOURNAL OF APPLIED PHYSICS
	2009
卷号	48 期号:6 页码:64505-64505
关键词	DEVICE MEDIA
ISSN号	0021-4922
通讯作者	Gong, YF, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Lab Nanotechnol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
学科主题	Physics, Applied
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/94759]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Gong, YF,Ling, Y,Song, ZT,et al. Simulation of Phase Change Random Access Memory for Low Reset Current and High Thermal Efficiency by Finite Element Modeling[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2009,48(6):64505-64505.
APA	Gong, YF,Ling, Y,Song, ZT,&Feng, SL.(2009).Simulation of Phase Change Random Access Memory for Low Reset Current and High Thermal Efficiency by Finite Element Modeling.JAPANESE JOURNAL OF APPLIED PHYSICS,48(6),64505-64505.
MLA	Gong, YF,et al."Simulation of Phase Change Random Access Memory for Low Reset Current and High Thermal Efficiency by Finite Element Modeling".JAPANESE JOURNAL OF APPLIED PHYSICS 48.6(2009):64505-64505.