Enhanced Performance of Phase Change Memory Cell Element by Initial Operation and Non-Cumulative Programming | |
Chen, YF ; Song, ZT ; Chen, XG ; Liu, B ; Xu, C ; Feng, GM ; Wang, LY ; Zhong, M ; Feng, SL | |
刊名 | CHINESE PHYSICS LETTERS |
2010 | |
卷号 | 27期号:10页码:107302-107302 |
关键词 | ELECTRODE FILM |
ISSN号 | 0256-307X |
通讯作者 | Chen, YF, Chinese Acad Sci, State Key Lab Funct Mat Informat, Lab Nanotechnol, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China |
学科主题 | Physics, Multidisciplinary |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2012-03-24 |
内容类型 | 期刊论文 |
源URL | [http://ir.sim.ac.cn/handle/331004/94744] |
专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
推荐引用方式 GB/T 7714 | Chen, YF,Song, ZT,Chen, XG,et al. Enhanced Performance of Phase Change Memory Cell Element by Initial Operation and Non-Cumulative Programming[J]. CHINESE PHYSICS LETTERS,2010,27(10):107302-107302. |
APA | Chen, YF.,Song, ZT.,Chen, XG.,Liu, B.,Xu, C.,...&Feng, SL.(2010).Enhanced Performance of Phase Change Memory Cell Element by Initial Operation and Non-Cumulative Programming.CHINESE PHYSICS LETTERS,27(10),107302-107302. |
MLA | Chen, YF,et al."Enhanced Performance of Phase Change Memory Cell Element by Initial Operation and Non-Cumulative Programming".CHINESE PHYSICS LETTERS 27.10(2010):107302-107302. |
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