Enhanced Performance of Phase Change Memory Cell Element by Initial Operation and Non-Cumulative Programming
Chen, YF ; Song, ZT ; Chen, XG ; Liu, B ; Xu, C ; Feng, GM ; Wang, LY ; Zhong, M ; Feng, SL
刊名CHINESE PHYSICS LETTERS
2010
卷号27期号:10页码:107302-107302
关键词ELECTRODE FILM
ISSN号0256-307X
通讯作者Chen, YF, Chinese Acad Sci, State Key Lab Funct Mat Informat, Lab Nanotechnol, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China
学科主题Physics, Multidisciplinary
收录类别SCI
语种英语
公开日期2012-03-24
内容类型期刊论文
源URL[http://ir.sim.ac.cn/handle/331004/94744]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
Chen, YF,Song, ZT,Chen, XG,et al. Enhanced Performance of Phase Change Memory Cell Element by Initial Operation and Non-Cumulative Programming[J]. CHINESE PHYSICS LETTERS,2010,27(10):107302-107302.
APA Chen, YF.,Song, ZT.,Chen, XG.,Liu, B.,Xu, C.,...&Feng, SL.(2010).Enhanced Performance of Phase Change Memory Cell Element by Initial Operation and Non-Cumulative Programming.CHINESE PHYSICS LETTERS,27(10),107302-107302.
MLA Chen, YF,et al."Enhanced Performance of Phase Change Memory Cell Element by Initial Operation and Non-Cumulative Programming".CHINESE PHYSICS LETTERS 27.10(2010):107302-107302.
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