Dynamic annealing versus thermal annealing effects on the formation of hydrogen-induced defects in silicon

	Dynamic annealing versus thermal annealing effects on the formation of hydrogen-induced defects in silicon
	Di, ZF ; Huang, MQ ; Wang, YQ ; Nastasi, M
刊名	APPLIED PHYSICS LETTERS
	2010
卷号	97 期号:19 页码:194101-194101
关键词	SINGLE-CRYSTAL SILICON INDUCED PLATELETS IMPLANTATION SI TEMPERATURE EXFOLIATION COMPLEXES FLUENCE CUT
ISSN号	0003-6951
通讯作者	Di, ZF, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
学科主题	Physics, Applied
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/94719]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Di, ZF,Huang, MQ,Wang, YQ,et al. Dynamic annealing versus thermal annealing effects on the formation of hydrogen-induced defects in silicon[J]. APPLIED PHYSICS LETTERS,2010,97(19):194101-194101.
APA	Di, ZF,Huang, MQ,Wang, YQ,&Nastasi, M.(2010).Dynamic annealing versus thermal annealing effects on the formation of hydrogen-induced defects in silicon.APPLIED PHYSICS LETTERS,97(19),194101-194101.
MLA	Di, ZF,et al."Dynamic annealing versus thermal annealing effects on the formation of hydrogen-induced defects in silicon".APPLIED PHYSICS LETTERS 97.19(2010):194101-194101.