Novel phase-change material GeSbSe for application of three-level phase-change random access memory

	Novel phase-change material GeSbSe for application of three-level phase-change random access memory
	Gu, YF ; Song, ZT ; Zhang, T ; Liu, B ; Feng, SL
刊名	SOLID-STATE ELECTRONICS
	2010
卷号	54 期号:4 页码:443-446
关键词	FILMS
ISSN号	0038-1101
通讯作者	Gu, YF, Chinese Acad Sci, State Key Lab Funct Mat Informat, Lab Nanotechnol, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China
学科主题	Engineering, Electrical & Electronic; Physics, Applied; Physics, Condensed Matter
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/94693]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Gu, YF,Song, ZT,Zhang, T,et al. Novel phase-change material GeSbSe for application of three-level phase-change random access memory[J]. SOLID-STATE ELECTRONICS,2010,54(4):443-446.
APA	Gu, YF,Song, ZT,Zhang, T,Liu, B,&Feng, SL.(2010).Novel phase-change material GeSbSe for application of three-level phase-change random access memory.SOLID-STATE ELECTRONICS,54(4),443-446.
MLA	Gu, YF,et al."Novel phase-change material GeSbSe for application of three-level phase-change random access memory".SOLID-STATE ELECTRONICS 54.4(2010):443-446.