Phase Change Memory Cell Using Si2Sb2Te3 Material

	Phase Change Memory Cell Using Si2Sb2Te3 Material
	Ren, K ; Rao, F ; Song, ZT ; Wu, LC ; Zhou, XL ; Liu, B ; Feng, SL ; Xi, W ; Chen, B
刊名	JAPANESE JOURNAL OF APPLIED PHYSICS
	2010
卷号	49 期号:8 页码:80212-80212
关键词	SB2TE3 FILMS ALLOYS
ISSN号	0021-4922
通讯作者	Ren, K, Chinese Acad Sci, State Key Lab Funct Mat Informat, Lab Nanotechnol, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China
学科主题	Physics, Applied
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/94657]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Ren, K,Rao, F,Song, ZT,et al. Phase Change Memory Cell Using Si2Sb2Te3 Material[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2010,49(8):80212-80212.
APA	Ren, K.,Rao, F.,Song, ZT.,Wu, LC.,Zhou, XL.,...&Chen, B.(2010).Phase Change Memory Cell Using Si2Sb2Te3 Material.JAPANESE JOURNAL OF APPLIED PHYSICS,49(8),80212-80212.
MLA	Ren, K,et al."Phase Change Memory Cell Using Si2Sb2Te3 Material".JAPANESE JOURNAL OF APPLIED PHYSICS 49.8(2010):80212-80212.