CORC  > 武汉大学
Effect of Interdigitated SiO2Current Blocking Layer on External Quantum Efficiency of High Power LEDs
Lyu, Jia-Jiang; Zheng, Chen-Ju; Liu, Xing-Tong; Hu, Hong-Po; Zhou, Sheng-Jun; Gao, Yi-Lin; Liu, Meng-Ling; Ding, Xing-Huo
刊名发光学报
2017
卷号38期号:6
ISSN号1000-7032
DOI10.3788/fgxb20173806.0786
URL标识查看原文
收录类别EI
语种中文
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/3737387
专题武汉大学
推荐引用方式
GB/T 7714
Lyu, Jia-Jiang,Zheng, Chen-Ju,Liu, Xing-Tong,et al. Effect of Interdigitated SiO2Current Blocking Layer on External Quantum Efficiency of High Power LEDs[J]. 发光学报,2017,38(6).
APA Lyu, Jia-Jiang.,Zheng, Chen-Ju.,Liu, Xing-Tong.,Hu, Hong-Po.,Zhou, Sheng-Jun.,...&Ding, Xing-Huo.(2017).Effect of Interdigitated SiO2Current Blocking Layer on External Quantum Efficiency of High Power LEDs.发光学报,38(6).
MLA Lyu, Jia-Jiang,et al."Effect of Interdigitated SiO2Current Blocking Layer on External Quantum Efficiency of High Power LEDs".发光学报 38.6(2017).
个性服务
查看访问统计
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。


©版权所有 ©2017 CSpace - Powered by CSpace