| Novel Strategy of Edge Saturation Hamiltonian for Graphene Nanoribbon Devices | |
| Chang, Sheng; Lv, Yawei; Huang, Qijun; Wang, Hao; He, Jin | |
| 刊名 | IEEE TRANSACTIONS ON ELECTRON DEVICES
 |
| 2016 | |
| 卷号 | 63期号:11 |
| 关键词 | Band structure edge saturation graphene nanoribbon (GNR) MOSFETs nonequilibrium Green's function method tight-binding (TB) Hamiltonian Wannier function |
| ISSN号 | 0018-9383 |
| DOI | 10.1109/TED.2016.2603156 |
| URL标识 | 查看原文 |
| 收录类别 | SCIE |
| 语种 | 英语 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/3736913 |
| 专题 | 武汉大学 |
| 推荐引用方式 GB/T 7714 | Chang, Sheng,Lv, Yawei,Huang, Qijun,et al. Novel Strategy of Edge Saturation Hamiltonian for Graphene Nanoribbon Devices[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2016,63(11). |
| APA | Chang, Sheng,Lv, Yawei,Huang, Qijun,Wang, Hao,&He, Jin.(2016).Novel Strategy of Edge Saturation Hamiltonian for Graphene Nanoribbon Devices.IEEE TRANSACTIONS ON ELECTRON DEVICES,63(11). |
| MLA | Chang, Sheng,et al."Novel Strategy of Edge Saturation Hamiltonian for Graphene Nanoribbon Devices".IEEE TRANSACTIONS ON ELECTRON DEVICES 63.11(2016). |
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