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	Enhanced ultraviolet electroluminescence and spectral narrowing from ZnO quantum dots/GaN heterojunction diodes by using high- k HfO2 electron blocking layer
	Chen, Zhao; Wang, Haoning; Mo, Xiaoming; Long, Hao; Feng, Yamin; Fang, Guojia; Li, Songzhan; Wan, Jiawei; Liu, Yuping; Ouyang, Yifang
刊名	Applied Physics Letters
	2014
卷号	105期号:6
ISSN号	0003-6951
DOI	10.1063/1.4893280
URL标识	查看原文
收录类别	EI
语种	英语
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3735210
专题	武汉大学
推荐引用方式 GB/T 7714	Chen, Zhao,Wang, Haoning,Mo, Xiaoming,et al. Enhanced ultraviolet electroluminescence and spectral narrowing from ZnO quantum dots/GaN heterojunction diodes by using high- k HfO2 electron blocking layer[J]. Applied Physics Letters,2014,105(6).
APA	Chen, Zhao.,Wang, Haoning.,Mo, Xiaoming.,Long, Hao.,Feng, Yamin.,...&Ouyang, Yifang.(2014).Enhanced ultraviolet electroluminescence and spectral narrowing from ZnO quantum dots/GaN heterojunction diodes by using high- k HfO2 electron blocking layer.Applied Physics Letters,105(6).
MLA	Chen, Zhao,et al."Enhanced ultraviolet electroluminescence and spectral narrowing from ZnO quantum dots/GaN heterojunction diodes by using high- k HfO2 electron blocking layer".Applied Physics Letters 105.6(2014).

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