Effects of Induction Heating on Temperature Distribution and Growth Rate in Large-Size SiC Growth System

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	Effects of Induction Heating on Temperature Distribution and Growth Rate in Large-Size SiC Growth System
	Chen QS(陈启生); Gao P(高鹏); Hu WR(胡文瑞)
刊名	Journal of Crystal Growth
	2004
通讯作者邮箱	qschen@imech.ac.cn
卷号	266 期号:1-3 页码:320-326
ISSN号	0022-0248
通讯作者	Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China.
中文摘要	For design of large-size silicon carbide (SiC) growth system, it is essential to choose induction heating parameters such as frequency and power. Modeling and simulations have been performed on a 2-in SiC growth system to investigate the effects of induction heating on the temperature distribution and growth rate. For frequencies in the range of 4-20 kHz, it is found that the maximum temperature and growth temperature in the growth system increase with the frequency while keeping the same current in the induction coil. For lower frequency induction heating, it is difficult to achieve high temperatures, which may be essential for the growth of high-quality crystals. It is observed from experiments that the quality of SiC crystals is related to the growth temperature. The SiC growth rates as a function of system pressure for different frequencies have been obtained by the theoretical method.
学科主题	力学
类目[WOS]	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
研究领域[WOS]	Crystallography ; Materials Science ; Physics
关键词[WOS]	SILICON-CARBIDE SUBLIMATION ; BULK CRYSTAL-GROWTH ; TANTALUM CONTAINER ; KINETICS ; TRANSPORT ; MODEL
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000221489900044
公开日期	2007-06-15 ; 2007-12-05 ; 2009-06-23
内容类型	期刊论文
源URL	[http://dspace.imech.ac.cn/handle/311007/15336]
专题	力学研究所_力学所知识产出(1956-2008)
推荐引用方式 GB/T 7714	Chen QS,Gao P,Hu WR. Effects of Induction Heating on Temperature Distribution and Growth Rate in Large-Size SiC Growth System[J]. Journal of Crystal Growth,2004,266(1-3):320-326.
APA	陈启生,高鹏,&胡文瑞.(2004).Effects of Induction Heating on Temperature Distribution and Growth Rate in Large-Size SiC Growth System.Journal of Crystal Growth,266(1-3),320-326.
MLA	陈启生,et al."Effects of Induction Heating on Temperature Distribution and Growth Rate in Large-Size SiC Growth System".Journal of Crystal Growth 266.1-3(2004):320-326.