Conduction and Valence Band Discontinuities in Some New Semiconductor Heterojunctions

	Conduction and Valence Band Discontinuities in Some New Semiconductor Heterojunctions
	Zhu QS (Zhu Qinsheng) ; Wu J (Wu Ju) ; Li CM (Li Chengming) ; Wang ZG (Wang Zhanguo)
刊名	journal of nanoscience and nanotechnology
	2011
卷号	11 期号:11 s1 页码:9368-9383
学科主题	半导体材料
公开日期	2012-02-22
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/22916]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Zhu QS ,Wu J ,Li CM ,et al. Conduction and Valence Band Discontinuities in Some New Semiconductor Heterojunctions[J]. journal of nanoscience and nanotechnology,2011,11(11 s1):9368-9383.
APA	Zhu QS ,Wu J ,Li CM ,&Wang ZG .(2011).Conduction and Valence Band Discontinuities in Some New Semiconductor Heterojunctions.journal of nanoscience and nanotechnology,11(11 s1),9368-9383.
MLA	Zhu QS ,et al."Conduction and Valence Band Discontinuities in Some New Semiconductor Heterojunctions".journal of nanoscience and nanotechnology 11.11 s1(2011):9368-9383.