Formation of rippled surface morphology during Si/Si (100) epitaxy by ultrahigh vacuum chemical vapour deposition

	Formation of rippled surface morphology during Si/Si (100) epitaxy by ultrahigh vacuum chemical vapour deposition
	Hu WX (Hu Wei-Xuan) ; Cheng BW (Cheng Bu-Wen) ; Xue CL (Xue Chun-Lai) ; Su SJ (Su Shao-Jian) ; Wang QM (Wang Qi-Ming)
刊名	chinese physics b
	2011
卷号	20 期号:12 页码:126801
学科主题	光电子学
公开日期	2012-02-22
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/22930]
专题	半导体研究所_集成光电子学国家重点实验室
推荐引用方式 GB/T 7714	Hu WX ,Cheng BW ,Xue CL ,et al. Formation of rippled surface morphology during Si/Si (100) epitaxy by ultrahigh vacuum chemical vapour deposition[J]. chinese physics b,2011,20(12):126801.
APA	Hu WX ,Cheng BW ,Xue CL ,Su SJ ,&Wang QM .(2011).Formation of rippled surface morphology during Si/Si (100) epitaxy by ultrahigh vacuum chemical vapour deposition.chinese physics b,20(12),126801.
MLA	Hu WX ,et al."Formation of rippled surface morphology during Si/Si (100) epitaxy by ultrahigh vacuum chemical vapour deposition".chinese physics b 20.12(2011):126801.