Long Wavelength Infrared InAs/GaSb Superlattice Photodetectors with InSb-Like and Mixed Interfaces

	Long Wavelength Infrared InAs/GaSb Superlattice Photodetectors with InSb-Like and Mixed Interfaces
	Zhang, YH ; Ma, WQ ; Cao, YL ; Huang, JL ; Wei, Y ; Cui, K ; Shao, J
刊名	ieee journal of quantum electronics
	2011
卷号	47 期号:12 页码:1475-1479
关键词	InAs/GaSb interfaces long wavelength infrared photodetector type II superlattice DETECTORS GROWTH
ISSN号	0018-9197
通讯作者	ma, wq (reprint author), chinese acad sci, inst semicond, lab nanooptoelect, beijing 100083, peoples r china，wqma@semi.ac.cn
学科主题	光电子学
收录类别	SCI
资助信息	national basic research program of china 973 program[2010cb327602]; natural science foundation[61176014, 61176075, 61021003]
语种	英语
公开日期	2012-02-06
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/22749]
专题	半导体研究所_纳米光电子实验室
推荐引用方式 GB/T 7714	Zhang, YH,Ma, WQ,Cao, YL,et al. Long Wavelength Infrared InAs/GaSb Superlattice Photodetectors with InSb-Like and Mixed Interfaces[J]. ieee journal of quantum electronics,2011,47(12):1475-1479.
APA	Zhang, YH.,Ma, WQ.,Cao, YL.,Huang, JL.,Wei, Y.,...&Shao, J.(2011).Long Wavelength Infrared InAs/GaSb Superlattice Photodetectors with InSb-Like and Mixed Interfaces.ieee journal of quantum electronics,47(12),1475-1479.
MLA	Zhang, YH,et al."Long Wavelength Infrared InAs/GaSb Superlattice Photodetectors with InSb-Like and Mixed Interfaces".ieee journal of quantum electronics 47.12(2011):1475-1479.