Forward bias voltage controlled infrared photodetection and electroluminescence from a p-i-n quantum dot structure

	Forward bias voltage controlled infrared photodetection and electroluminescence from a p-i-n quantum dot structure
	Cui K ; Ma WQ ; Zhang YH ; Huang JL ; Wei Y ; Cao YL ; Jin Z ; Bian LF
刊名	applied physics letters
	2011
卷号	99 期号:2 页码:23502
关键词	DETECTOR
ISSN号	0003-6951
通讯作者	ma, wq (reprint author), chinese acad sci, lab nanooptoelect, inst semicond, qinghua e rd a 35,pob 912, beijing 100083, peoples r china, wqma@semi.ac.cn
学科主题	光电子学
收录类别	SCI
资助信息	china's national 973 research programme[2010cb327602]; natural science fund for innovative research group[61021003]; nsf[60806048]
语种	英语
公开日期	2012-02-06
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/22747]
专题	半导体研究所_纳米光电子实验室
推荐引用方式 GB/T 7714	Cui K,Ma WQ,Zhang YH,et al. Forward bias voltage controlled infrared photodetection and electroluminescence from a p-i-n quantum dot structure[J]. applied physics letters,2011,99(2):23502.
APA	Cui K.,Ma WQ.,Zhang YH.,Huang JL.,Wei Y.,...&Bian LF.(2011).Forward bias voltage controlled infrared photodetection and electroluminescence from a p-i-n quantum dot structure.applied physics letters,99(2),23502.
MLA	Cui K,et al."Forward bias voltage controlled infrared photodetection and electroluminescence from a p-i-n quantum dot structure".applied physics letters 99.2(2011):23502.