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	Epitaxial growth of 3C–SiC on Si(111) and (001) by laser CVD
	Zhu, Peipei; Yang, Meijun; Xu, Qingfang; Sun, Qingyun; Tu, Rong; Li, Jun; Zhang, Song*; Li, Qizhong; Zhang, Lianmeng; Goto, Takashi
刊名	Journal of the American Ceramic Society
	2018
卷号	101期号:9页码:3850-3856
关键词	3C–SiC epitaxial growth laser chemical vapor deposition microstructure
ISSN号	1551-2916
DOI	10.1111/jace.15557
URL标识	查看原文
WOS记录号	WOS:000436943300014
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3388672
专题	武汉理工大学
作者单位	1.[Yang, Meijun 2.Zhang, Lianmeng 3.Tu, Rong 4.Xu, Qingfang 5.Zhu, Peipei 6.Sun, Qingyun 7.Zhang, Song 8.Goto, Takashi 9.Li, Haiwen] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan, Hubei, Peoples R China.
推荐引用方式 GB/T 7714	Zhu, Peipei,Yang, Meijun,Xu, Qingfang,et al. Epitaxial growth of 3C–SiC on Si(111) and (001) by laser CVD[J]. Journal of the American Ceramic Society,2018,101(9):3850-3856.
APA	Zhu, Peipei.,Yang, Meijun.,Xu, Qingfang.,Sun, Qingyun.,Tu, Rong.,...&Basu, Bikramjit.(2018).Epitaxial growth of 3C–SiC on Si(111) and (001) by laser CVD.Journal of the American Ceramic Society,101(9),3850-3856.
MLA	Zhu, Peipei,et al."Epitaxial growth of 3C–SiC on Si(111) and (001) by laser CVD".Journal of the American Ceramic Society 101.9(2018):3850-3856.

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