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The tuning effect of the electric field on the physical properties of some typical wurtzite semiconductors
Li, Jia-Ning; Hu, San-Lue; Dong, Hao-Yu; Xu, Xiao-Ying; Wang, Jia-Fu; Li, Ang; Wang, Qing-Guo; Li, Yan-Li*
刊名Modern Physics Letters B
2017
卷号31期号:33
关键词Density functional theory band gap electronic field wurtzite semiconductor
ISSN号0217-9849
DOI10.1142/S0217984917503109
URL标识查看原文
WOS记录号WOS:000416511200005
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/3387813
专题武汉理工大学
作者单位1.[Li, Jia-Ning
2.Hu, San-Lue
3.Xu, Xiao-Ying
4.Wang, Jia-Fu
5.Li, Yan-Li
6.Dong, Hao-Yu] Wuhan Univ Technol, Sch Sci, Dept Phys, Wuhan 430070, Hubei, Peoples R China.
推荐引用方式
GB/T 7714
Li, Jia-Ning,Hu, San-Lue,Dong, Hao-Yu,et al. The tuning effect of the electric field on the physical properties of some typical wurtzite semiconductors[J]. Modern Physics Letters B,2017,31(33).
APA Li, Jia-Ning.,Hu, San-Lue.,Dong, Hao-Yu.,Xu, Xiao-Ying.,Wang, Jia-Fu.,...&Li, Yan-Li*.(2017).The tuning effect of the electric field on the physical properties of some typical wurtzite semiconductors.Modern Physics Letters B,31(33).
MLA Li, Jia-Ning,et al."The tuning effect of the electric field on the physical properties of some typical wurtzite semiconductors".Modern Physics Letters B 31.33(2017).
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