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	Removal of metal impurities in metallurgical grade silicon by cold crucible continuous melting and directional solidification
	Huang, Feng; Chen, Ruirun*; Guo, Jingjie; Ding, Hongsheng; Su, Yanqing
刊名	Separation and Purification Technology
	2017
卷号	188页码:67-72
关键词	Purification Metallurgical grade silicon Metal impurity Continuous directional solidification
ISSN号	1383-5866
DOI	10.1016/j.seppur.2017.06.073
URL标识	查看原文
WOS记录号	WOS:000412607500007;EI:20172903958561
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3383003
专题	武汉理工大学
作者单位	1.[Su, Yanqing 2.Huang, Feng 3.Chen, Ruirun 4.Guo, Jingjie 5.Ding, Hongsheng] Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Heilongjiang, Peoples R China.
推荐引用方式 GB/T 7714	Huang, Feng,Chen, Ruirun*,Guo, Jingjie,et al. Removal of metal impurities in metallurgical grade silicon by cold crucible continuous melting and directional solidification[J]. Separation and Purification Technology,2017,188:67-72.
APA	Huang, Feng,Chen, Ruirun*,Guo, Jingjie,Ding, Hongsheng,&Su, Yanqing.(2017).Removal of metal impurities in metallurgical grade silicon by cold crucible continuous melting and directional solidification.Separation and Purification Technology,188,67-72.
MLA	Huang, Feng,et al."Removal of metal impurities in metallurgical grade silicon by cold crucible continuous melting and directional solidification".Separation and Purification Technology 188(2017):67-72.

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