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	Electronic structure and absolute band edge position of tetragonal AgInS2 photocatalyst: A hybrid density functional study
	Liu, Jianjun*; Hua, Enda
刊名	Materials Science in Semiconductor Processing
	2015
卷号	40页码:446-452
关键词	Tetragonal AgInS2 Ab initio calculations Electronic structure
ISSN号	1369-8001
DOI	10.1016/j.mssp.2015.07.008
URL标识	查看原文
WOS记录号	WOS:000363344600063;EI:20152901046109
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3371030
专题	武汉理工大学
作者单位	[Liu, Jianjun] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China.
推荐引用方式 GB/T 7714	Liu, Jianjun*,Hua, Enda. Electronic structure and absolute band edge position of tetragonal AgInS2 photocatalyst: A hybrid density functional study[J]. Materials Science in Semiconductor Processing,2015,40:446-452.
APA	Liu, Jianjun*,&Hua, Enda.(2015).Electronic structure and absolute band edge position of tetragonal AgInS2 photocatalyst: A hybrid density functional study.Materials Science in Semiconductor Processing,40,446-452.
MLA	Liu, Jianjun*,et al."Electronic structure and absolute band edge position of tetragonal AgInS2 photocatalyst: A hybrid density functional study".Materials Science in Semiconductor Processing 40(2015):446-452.

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