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	Molecular dynamics simulation of mechanical properties of single-crystal bismuth telluride nanowire
	Tong, Y.*; Yi, F. J.; Liu, L. S.; Zhang, Q. J.
刊名	Journal of Electronic Materials
	2010
卷号	39期号:9页码:1730-1734
关键词	Molecular dynamics bismuth telluride nanowire strain rate
ISSN号	0361-5235
DOI	10.1007/s11664-010-1204-6
会议名称	28th International Conference on Thermoelectrics/7th European Conference on Thermoelectrics
URL标识	查看原文
会议地点	Freiburg, GERMANY
会议日期	JUL 26-30, 2009
WOS记录号	WOS:000281393000066;EI:20103613213676
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3369274
专题	武汉理工大学
作者单位	1.[Tong, Y. 2.Liu, L. S. 3.Zhang, Q. J.] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China.
推荐引用方式 GB/T 7714	Tong, Y.*,Yi, F. J.,Liu, L. S.,et al. Molecular dynamics simulation of mechanical properties of single-crystal bismuth telluride nanowire[J]. Journal of Electronic Materials,2010,39(9):1730-1734.
APA	Tong, Y.*,Yi, F. J.,Liu, L. S.,&Zhang, Q. J..(2010).Molecular dynamics simulation of mechanical properties of single-crystal bismuth telluride nanowire.Journal of Electronic Materials,39(9),1730-1734.
MLA	Tong, Y.*,et al."Molecular dynamics simulation of mechanical properties of single-crystal bismuth telluride nanowire".Journal of Electronic Materials 39.9(2010):1730-1734.

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