The realization of a high thermoelectric figure of merit in Ge-substituted β-Zn4Sb3 through band structure modification | |
Wang, Shanyu; Tan, Xiaojian; Tan, Gangjian; She, Xiaoyu; Liu, Wei; Li, Han; Liu, Huijun; Tang, Xinfeng*(唐新峰) | |
刊名 | Journal of Materials Chemistry
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2012 | |
卷号 | 22期号:28页码:13977-13985 |
ISSN号 | 0959-9428 |
DOI | 10.1039/c2jm30906h |
URL标识 | 查看原文 |
WOS记录号 | WOS:000305796300020;EI:20122915250395 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/3367662 |
专题 | 武汉理工大学 |
作者单位 | 1.[Tang, Xinfeng 2.Liu, Wei 3.Tan, Gangjian 4.Li, Han 5.Wang, Shanyu 6.She, Xiaoyu] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China. |
推荐引用方式 GB/T 7714 | Wang, Shanyu,Tan, Xiaojian,Tan, Gangjian,et al. The realization of a high thermoelectric figure of merit in Ge-substituted β-Zn4Sb3 through band structure modification[J]. Journal of Materials Chemistry,2012,22(28):13977-13985. |
APA | Wang, Shanyu.,Tan, Xiaojian.,Tan, Gangjian.,She, Xiaoyu.,Liu, Wei.,...&Tang, Xinfeng*.(2012).The realization of a high thermoelectric figure of merit in Ge-substituted β-Zn4Sb3 through band structure modification.Journal of Materials Chemistry,22(28),13977-13985. |
MLA | Wang, Shanyu,et al."The realization of a high thermoelectric figure of merit in Ge-substituted β-Zn4Sb3 through band structure modification".Journal of Materials Chemistry 22.28(2012):13977-13985. |
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