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The realization of a high thermoelectric figure of merit in Ge-substituted β-Zn4Sb3 through band structure modification
Wang, Shanyu; Tan, Xiaojian; Tan, Gangjian; She, Xiaoyu; Liu, Wei; Li, Han; Liu, Huijun; Tang, Xinfeng*(唐新峰)
刊名Journal of Materials Chemistry
2012
卷号22期号:28页码:13977-13985
ISSN号0959-9428
DOI10.1039/c2jm30906h
URL标识查看原文
WOS记录号WOS:000305796300020;EI:20122915250395
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/3367662
专题武汉理工大学
作者单位1.[Tang, Xinfeng
2.Liu, Wei
3.Tan, Gangjian
4.Li, Han
5.Wang, Shanyu
6.She, Xiaoyu] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China.
推荐引用方式
GB/T 7714
Wang, Shanyu,Tan, Xiaojian,Tan, Gangjian,et al. The realization of a high thermoelectric figure of merit in Ge-substituted β-Zn4Sb3 through band structure modification[J]. Journal of Materials Chemistry,2012,22(28):13977-13985.
APA Wang, Shanyu.,Tan, Xiaojian.,Tan, Gangjian.,She, Xiaoyu.,Liu, Wei.,...&Tang, Xinfeng*.(2012).The realization of a high thermoelectric figure of merit in Ge-substituted β-Zn4Sb3 through band structure modification.Journal of Materials Chemistry,22(28),13977-13985.
MLA Wang, Shanyu,et al."The realization of a high thermoelectric figure of merit in Ge-substituted β-Zn4Sb3 through band structure modification".Journal of Materials Chemistry 22.28(2012):13977-13985.
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