Quantum-dot-induced optical transition enhancement in InAs quantum-dot-embedded p-i-n GaAs solar cells

	Quantum-dot-induced optical transition enhancement in InAs quantum-dot-embedded p-i-n GaAs solar cells
	Shang XJ ; He JF ; Li MF ; Zhan F ; Ni HQ ; Niu ZC ; Pettersson H ; Fu Y
刊名	applied physics letters
	2011
卷号	99 期号:11 页码:113514
关键词	WELL INFRARED PHOTODETECTOR PHOTOCURRENT EFFICIENCY
ISSN号	0003-6951
通讯作者	fu, y (reprint author), royal inst technol, sch biotechnol, div theoret chem & biol, s-10691 stockholm, swedenfyg@theochem.kth.se
学科主题	半导体物理
收录类别	SCI
资助信息	chinese natural science fund[60625405, 90921015]; 973 project in china[2010cb327601]; richertska foundation in sweden
语种	英语
公开日期	2012-01-06
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/22703]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Shang XJ,He JF,Li MF,et al. Quantum-dot-induced optical transition enhancement in InAs quantum-dot-embedded p-i-n GaAs solar cells[J]. applied physics letters,2011,99(11):113514.
APA	Shang XJ.,He JF.,Li MF.,Zhan F.,Ni HQ.,...&Fu Y.(2011).Quantum-dot-induced optical transition enhancement in InAs quantum-dot-embedded p-i-n GaAs solar cells.applied physics letters,99(11),113514.
MLA	Shang XJ,et al."Quantum-dot-induced optical transition enhancement in InAs quantum-dot-embedded p-i-n GaAs solar cells".applied physics letters 99.11(2011):113514.