| Strain engineering on electronic structure and carrier mobility in monolayer GeP3 | |
| Zeng, Bowen; Long, Mengqiu*; Zhang, Xiaojiao; Dong, Yulan; Li, Mingjun; Yi, Yougen; Duan, Haiming | |
| 刊名 | Journal of Physics D: Applied Physics
 |
| 2018 | |
| 卷号 | 51期号:23页码:235302 |
| 关键词 | bonding character electronic structure strain engineering transport polarity |
| ISSN号 | 0022-3727 |
| DOI | 10.1088/1361-6463/aac0a4 |
| URL标识 | 查看原文 |
| WOS记录号 | WOS:000432489100001;EI:20182305287665 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/3347630 |
| 专题 | 中南大学 |
| 作者单位 | 1.[Long, Mengqiu 2.Yi, Yougen 3.Li, Mingjun 4.Dong, Yulan 5.Zeng, Bowen] Cent S Univ, Sch Phys & Elect, Hunan Key Lab Super Microstruct & Ultrafast Proc, Changsha 410083, Hunan, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Zeng, Bowen,Long, Mengqiu*,Zhang, Xiaojiao,et al. Strain engineering on electronic structure and carrier mobility in monolayer GeP3[J]. Journal of Physics D: Applied Physics,2018,51(23):235302. |
| APA | Zeng, Bowen.,Long, Mengqiu*.,Zhang, Xiaojiao.,Dong, Yulan.,Li, Mingjun.,...&Duan, Haiming.(2018).Strain engineering on electronic structure and carrier mobility in monolayer GeP3.Journal of Physics D: Applied Physics,51(23),235302. |
| MLA | Zeng, Bowen,et al."Strain engineering on electronic structure and carrier mobility in monolayer GeP3".Journal of Physics D: Applied Physics 51.23(2018):235302. |
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