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	Electronic structure evolution and energy level alignment at C 60/4,4′-cyclohexylidenebis[N,N-bis(4-methylphenyl) benzenamine]/MoOx/indium tin oxide interfaces
	Liu, Xiaoliang; Yi, Shijuan; Wang, Chenggong; Wang, Congcong; Gao, Yongli*
刊名	Journal of Applied Physics
	2014
卷号	115期号:16
ISSN号	0021-8979
DOI	10.1063/1.4873959
URL标识	查看原文
WOS记录号	WOS:000335228400038;EI:20142017724173
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3319136
专题	中南大学
作者单位	1.[Yi, Shijuan 2.Liu, Xiaoliang] Cent S Univ, Coll Phys & Elect, Hunan Key Lab Super Microstruct & Ultrafast Proc, Changsha 410083, Peoples R China.
推荐引用方式 GB/T 7714	Liu, Xiaoliang,Yi, Shijuan,Wang, Chenggong,et al. Electronic structure evolution and energy level alignment at C 60/4,4′-cyclohexylidenebis[N,N-bis(4-methylphenyl) benzenamine]/MoOx/indium tin oxide interfaces[J]. Journal of Applied Physics,2014,115(16).
APA	Liu, Xiaoliang,Yi, Shijuan,Wang, Chenggong,Wang, Congcong,&Gao, Yongli*.(2014).Electronic structure evolution and energy level alignment at C 60/4,4′-cyclohexylidenebis[N,N-bis(4-methylphenyl) benzenamine]/MoOx/indium tin oxide interfaces.Journal of Applied Physics,115(16).
MLA	Liu, Xiaoliang,et al."Electronic structure evolution and energy level alignment at C 60/4,4′-cyclohexylidenebis[N,N-bis(4-methylphenyl) benzenamine]/MoOx/indium tin oxide interfaces".Journal of Applied Physics 115.16(2014).

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