Fast pore etching on high resistivity n-type silicon via photoelectrochemistry

	Fast pore etching on high resistivity n-type silicon via photoelectrochemistry
	Bao, XQ ; Ge, DH ; Zhang, S ; Li, JP ; Zhou, P ; Jiao, JW ; Wang, YL
刊名	CHINESE PHYSICS B
	2009
卷号	18 期号:2 页码:664-670
关键词	P-TYPE SILICON MACROPORE FORMATION POROUS SILICON FORMATION MECHANISMS ARRAY FORMATION MORPHOLOGY PHYSICS DENSITY LIMITS SI
ISSN号	1674-1056
通讯作者	Jiao, JW, Chinese Acad Sci, Shanghai Inst Microsyst & Informat, Natl Key Labs Microsyst Technol, State Key Labs Transducer Technol, Shanghai 200050, Peoples R China
学科主题	Physics, Multidisciplinary
收录类别	SCI
语种	英语
公开日期	2011-12-17
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/38487]
专题	上海微系统与信息技术研究所_微系统技术_期刊论文
推荐引用方式 GB/T 7714	Bao, XQ,Ge, DH,Zhang, S,et al. Fast pore etching on high resistivity n-type silicon via photoelectrochemistry[J]. CHINESE PHYSICS B,2009,18(2):664-670.
APA	Bao, XQ.,Ge, DH.,Zhang, S.,Li, JP.,Zhou, P.,...&Wang, YL.(2009).Fast pore etching on high resistivity n-type silicon via photoelectrochemistry.CHINESE PHYSICS B,18(2),664-670.
MLA	Bao, XQ,et al."Fast pore etching on high resistivity n-type silicon via photoelectrochemistry".CHINESE PHYSICS B 18.2(2009):664-670.