Monte Carlo study of terahertz generation from streaming distribution of two-dimensional electrons in a GaN quantum well

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	Monte Carlo study of terahertz generation from streaming distribution of two-dimensional electrons in a GaN quantum well
	Lu,JT ; Cao,JC
刊名	SEMICONDUCTOR SCIENCE AND TECHNOLOGY
	2005
卷号	20 期号:8 页码:829-833
关键词	MOBILITY HETEROSTRUCTURES POLARIZATION SIMULATION RADIATION DIODES LASER
ISSN号	0268-1242
通讯作者	Lu, JT, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, 865 Changning Rd, Shanghai 200050, Peoples R China
学科主题	Engineering ; Electrical & Electronic; Materials Science ; Multidisciplinary; Physics ; Condensed Matter
收录类别	SCI
公开日期	2011-12-17
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/39087]
专题	上海微系统与信息技术研究所_太赫兹、微波射频技术_期刊论文
推荐引用方式 GB/T 7714	Lu,JT,Cao,JC. Monte Carlo study of terahertz generation from streaming distribution of two-dimensional electrons in a GaN quantum well[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2005,20(8):829-833.
APA	Lu,JT,&Cao,JC.(2005).Monte Carlo study of terahertz generation from streaming distribution of two-dimensional electrons in a GaN quantum well.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,20(8),829-833.
MLA	Lu,JT,et al."Monte Carlo study of terahertz generation from streaming distribution of two-dimensional electrons in a GaN quantum well".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 20.8(2005):829-833.