Terahertz-induced electron-hole pair generation in semiconductor heterojunctions

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	Terahertz-induced electron-hole pair generation in semiconductor heterojunctions
	Cao, JC
刊名	JOURNAL OF THE KOREAN PHYSICAL SOCIETY
	2005
卷号	46 页码:S109-S111
关键词	IMPACT IONIZATION TRANSPORT FIELD
ISSN号	0374-4884
通讯作者	Cao, JC, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
学科主题	Physics, Multidisciplinary
收录类别	SCI
语种	英语
公开日期	2011-12-17
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/37521]
专题	上海微系统与信息技术研究所_太赫兹、微波射频技术_期刊论文
推荐引用方式 GB/T 7714	Cao, JC. Terahertz-induced electron-hole pair generation in semiconductor heterojunctions[J]. JOURNAL OF THE KOREAN PHYSICAL SOCIETY,2005,46:S109-S111.
APA	Cao, JC.(2005).Terahertz-induced electron-hole pair generation in semiconductor heterojunctions.JOURNAL OF THE KOREAN PHYSICAL SOCIETY,46,S109-S111.
MLA	Cao, JC."Terahertz-induced electron-hole pair generation in semiconductor heterojunctions".JOURNAL OF THE KOREAN PHYSICAL SOCIETY 46(2005):S109-S111.