Interfacial traps and mobile ions induced flatband voltage instability in 4H-SiC MOS capacitors under bias temperature stress | |
Yang, Chao; Gu, Zhenghao; Yin, Zhipeng; Qin, Fuwen; Wang, Dejun | |
刊名 | JOURNAL OF PHYSICS D-APPLIED PHYSICS
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2019 | |
卷号 | 52 |
关键词 | 4H-SiC MOS capacitor bias temperature stress flatband voltage instability interfacial traps mobile ions |
ISSN号 | 0022-3727 |
URL标识 | 查看原文 |
WOS记录号 | [DB:DC_IDENTIFIER_WOSID] |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/3230043 |
专题 | 大连理工大学 |
作者单位 | 1.Dalian Univ Technol, Liaoning Integrated Circuit Technol Key Lab, Sch Control Sci & Engn, Fac Elect Informat & Elect Engn, Dalian 116024, Peoples R China. 2.Dalian Univ Technol, Minist Educ, State Key Lab Mat Modificat Laser Ion & Electron, Dalian 116024, Peoples R China. |
推荐引用方式 GB/T 7714 | Yang, Chao,Gu, Zhenghao,Yin, Zhipeng,et al. Interfacial traps and mobile ions induced flatband voltage instability in 4H-SiC MOS capacitors under bias temperature stress[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2019,52. |
APA | Yang, Chao,Gu, Zhenghao,Yin, Zhipeng,Qin, Fuwen,&Wang, Dejun.(2019).Interfacial traps and mobile ions induced flatband voltage instability in 4H-SiC MOS capacitors under bias temperature stress.JOURNAL OF PHYSICS D-APPLIED PHYSICS,52. |
MLA | Yang, Chao,et al."Interfacial traps and mobile ions induced flatband voltage instability in 4H-SiC MOS capacitors under bias temperature stress".JOURNAL OF PHYSICS D-APPLIED PHYSICS 52(2019). |
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