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	Interfacial traps and mobile ions induced flatband voltage instability in 4H-SiC MOS capacitors under bias temperature stress
	Yang, Chao; Gu, Zhenghao; Yin, Zhipeng; Qin, Fuwen; Wang, Dejun
刊名	JOURNAL OF PHYSICS D-APPLIED PHYSICS
	2019
卷号	52
关键词	4H-SiC MOS capacitor bias temperature stress flatband voltage instability interfacial traps mobile ions
ISSN号	0022-3727
URL标识	查看原文
WOS记录号	[DB:DC_IDENTIFIER_WOSID]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3230043
专题	大连理工大学
作者单位	1.Dalian Univ Technol, Liaoning Integrated Circuit Technol Key Lab, Sch Control Sci & Engn, Fac Elect Informat & Elect Engn, Dalian 116024, Peoples R China. 2.Dalian Univ Technol, Minist Educ, State Key Lab Mat Modificat Laser Ion & Electron, Dalian 116024, Peoples R China.
推荐引用方式 GB/T 7714	Yang, Chao,Gu, Zhenghao,Yin, Zhipeng,et al. Interfacial traps and mobile ions induced flatband voltage instability in 4H-SiC MOS capacitors under bias temperature stress[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2019,52.
APA	Yang, Chao,Gu, Zhenghao,Yin, Zhipeng,Qin, Fuwen,&Wang, Dejun.(2019).Interfacial traps and mobile ions induced flatband voltage instability in 4H-SiC MOS capacitors under bias temperature stress.JOURNAL OF PHYSICS D-APPLIED PHYSICS,52.
MLA	Yang, Chao,et al."Interfacial traps and mobile ions induced flatband voltage instability in 4H-SiC MOS capacitors under bias temperature stress".JOURNAL OF PHYSICS D-APPLIED PHYSICS 52(2019).

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