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	The n-type Si-based materials applied on the front surface of IBC-SHJ solar cells
	Bao, Jianhui; Tao, Ke; Lin, Yiren; Jia, Rui; Liu, Aimin
刊名	CHINESE PHYSICS B
	2019
卷号	28
关键词	Si-based doped materials passivation interdigitated back contact silicon hetero-junction (IBC-SHJ) solar cell simulation
ISSN号	1674-1056
URL标识	查看原文
WOS记录号	[DB:DC_IDENTIFIER_WOSID]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3227505
专题	大连理工大学
作者单位	1.Dalian Univ Technol, Sch Microelect, Dalian 116024, Peoples R China. 2.Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China. 3.Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China. 4.Dalian Univ Technol, Sch Microelect, Dalian 116024, Peoples R China. 5.Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China.
推荐引用方式 GB/T 7714	Bao, Jianhui,Tao, Ke,Lin, Yiren,et al. The n-type Si-based materials applied on the front surface of IBC-SHJ solar cells[J]. CHINESE PHYSICS B,2019,28.
APA	Bao, Jianhui,Tao, Ke,Lin, Yiren,Jia, Rui,&Liu, Aimin.(2019).The n-type Si-based materials applied on the front surface of IBC-SHJ solar cells.CHINESE PHYSICS B,28.
MLA	Bao, Jianhui,et al."The n-type Si-based materials applied on the front surface of IBC-SHJ solar cells".CHINESE PHYSICS B 28(2019).

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