QQ客服 官方微博 反馈留言

	First-principles calculations of vacancy-O-He and vacancy-N-He complexes in vanadium
	Zhang, Pengbo; Ding, Jianhua; Sun, Dan; Yang, Yaochun; Huang, Shaosong; Zhao, Jijun
刊名	COMPUTATIONAL MATERIALS SCIENCE
	2019
卷号	160页码:180-185
关键词	Vacancy-oxygen Vacancy-nitrogen Helium Vanadium First principles
ISSN号	0927-0256
URL标识	查看原文
WOS记录号	[DB:DC_IDENTIFIER_WOSID]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3221317
专题	大连理工大学
作者单位	1.Dalian Maritime Univ, Sch Sci, Dalian 116026, Peoples R China. 2.Dalian Univ Technol, Minist Educ, Key Lab Mat Modificat Laser Ion & Electron Beams, Dalian 116024, Peoples R China.
推荐引用方式 GB/T 7714	Zhang, Pengbo,Ding, Jianhua,Sun, Dan,et al. First-principles calculations of vacancy-O-He and vacancy-N-He complexes in vanadium[J]. COMPUTATIONAL MATERIALS SCIENCE,2019,160:180-185.
APA	Zhang, Pengbo,Ding, Jianhua,Sun, Dan,Yang, Yaochun,Huang, Shaosong,&Zhao, Jijun.(2019).First-principles calculations of vacancy-O-He and vacancy-N-He complexes in vanadium.COMPUTATIONAL MATERIALS SCIENCE,160,180-185.
MLA	Zhang, Pengbo,et al."First-principles calculations of vacancy-O-He and vacancy-N-He complexes in vanadium".COMPUTATIONAL MATERIALS SCIENCE 160(2019):180-185.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。