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Photoelectrochemically combined mechanical polishing of n-type gallium nitride wafer by using metal nanoparticles as photocathodes
Ou, L.; Dong, Z.; Kang, R.; Shi, K.; Guo, D.
刊名International Journal of Advanced Manufacturing Technology
2019
ISSN号02683768
URL标识查看原文
WOS记录号[DB:DC_IDENTIFIER_WOSID]
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/3220110
专题大连理工大学
作者单位1.Institute of Advanced Manufacturing Technology, School of Mechanical Engineering, Dalian University of Technology, No. 2 Linggong Rd, Dalian, 116024, China
2.Department of Chemistry and State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, 422 Siming South Road, Xiamen, 361005, China
推荐引用方式
GB/T 7714
Ou, L.,Dong, Z.,Kang, R.,et al. Photoelectrochemically combined mechanical polishing of n-type gallium nitride wafer by using metal nanoparticles as photocathodes[J]. International Journal of Advanced Manufacturing Technology,2019.
APA Ou, L.,Dong, Z.,Kang, R.,Shi, K.,&Guo, D..(2019).Photoelectrochemically combined mechanical polishing of n-type gallium nitride wafer by using metal nanoparticles as photocathodes.International Journal of Advanced Manufacturing Technology.
MLA Ou, L.,et al."Photoelectrochemically combined mechanical polishing of n-type gallium nitride wafer by using metal nanoparticles as photocathodes".International Journal of Advanced Manufacturing Technology (2019).
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